Nanoscale transistors : device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo.
Record details
- ISBN: 0387280022
- Physical Description: vi, 217 p. : il. ; 25 cm.
- Publisher: New York, NY : Springer, c2006.
Content descriptions
| Bibliography, etc. Note: | Incluye bibliografía e índice. |
| Immediate Source of Acquisition Note: | PROYECTO/AVA/DR. HARET-CODRATIAN ROSU BARBUS/CONACYT-SEP-S-3108. |
Search for related items by subject
| Subject: | Nanoestructura de materiales > Modelos matemáticos. Transitores de efecto de campo de metal óxido semiconductor > Modelos matemáticos. |
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- 0 of 1 copy available at IPICYT.
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| Location | Call Number / Copy Notes | Barcode | Shelving Location | Status | Due Date |
|---|---|---|---|---|---|
| Biblioteca Ipicyt | T174.7 L8 N3 2006 | AVA00538 | Coleccion General | Proyecto | - |
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