Nanoscale transistors : device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo.
Record details
- ISBN: 0387280022
- Physical Description: vi, 217 p. : il. ; 25 cm.
- Publisher: New York, NY : Springer, c2006.
Content descriptions
| Bibliography, etc. Note: | Incluye bibliografía e índice. |
| Immediate Source of Acquisition Note: | PROYECTO/AVA/DR. HARET-CODRATIAN ROSU BARBUS/CONACYT-SEP-S-3108. |
Search for related items by subject
| Subject: | Nanoestructura de materiales > Modelos matemáticos. Transitores de efecto de campo de metal óxido semiconductor > Modelos matemáticos. |
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- 0 of 1 copy available at IPICYT.
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- 0 current holds with 1 total copy.
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| Location | Call Number / Copy Notes | Barcode | Shelving Location | Status | Due Date |
|---|
| LDR | 00849cam a20002054500 | ||
|---|---|---|---|
| 001 | 973 | ||
| 003 | CONS | ||
| 005 | 0110617132452.0 | ||
| 006 | aaaafr 1 | ||
| 007 | ta | ||
| 008 | 090114su 2006inuaaaafr 1 eng#d | ||
| 020 | . | ‡a0387280022 | |
| 050 | 0 | 0. | ‡aT174.7 ‡bL8 N3 2006 |
| 100 | 1 | . | ‡aLundstrom, Mark S. |
| 245 | . | ‡aNanoscale transistors : ‡bdevice physics, modeling and simulation / ‡cMark S. Lundstrom, Jing Guo. | |
| 260 | . | ‡aNew York, NY : ‡bSpringer, ‡cc2006. | |
| 300 | . | ‡avi, 217 p. : ‡bil. ; ‡c25 cm. | |
| 504 | . | ‡aIncluye bibliografía e índice. | |
| 541 | . | ‡aPROYECTO/AVA/DR. HARET-CODRATIAN ROSU BARBUS/CONACYT-SEP-S-3108. | |
| 650 | . | ‡aNanoestructura de materiales ‡xModelos matemáticos. | |
| 650 | . | ‡aTransitores de efecto de campo de metal óxido semiconductor ‡xModelos matemáticos. | |
| 700 | 1 | . | ‡aGuo, Jing, ‡d 1977- |
| 999 | . | ‡aT174.7 L8 N3 2006 ‡iAVA00538 ‡lCOL_GRAL ‡tLIBRO | |
| 901 | . | ‡a973 ‡b ‡c973 ‡tbiblio ‡sSystem Local | |
